| 发明名称 |
METHOD OF MANUFACTURE OF A TRENCH-GATE SEMICONDUCTOR DEVICE |
| 摘要 |
A method of making a trench MOSFET includes forming a layer of porous silicon (26) at the bottom of a trench and then oxidizing the layer of porous silicon (26) to form a plug (30) at the bottom of the trench. This forms a thick oxide plug at the bottom of the trench thereby reducing capacitance between gate and drain.
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| 申请公布号 |
KR20050085609(A) |
申请公布日期 |
2005.08.29 |
| 申请号 |
KR20057010760 |
申请日期 |
2005.06.13 |
| 申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
HIJZEN ERWIN A. |
| 分类号 |
H01L21/336;H01L29/423;H01L29/78;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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| 主权项 |
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