| 发明名称 |
A METHOD AND APPARATUS FOR FORMING A HIGH QUALITY LOW TEMPERATURE SILICON NITRIDE FILM |
| 摘要 |
A method of forming a silicon nitride film is described. According to the present invention, a silicon nitride film is deposited by thermally decomposing a silicon/nitrogen containing source gas or a silicon containing source gas and a nitrogen containing source gas at low deposition temperatures (e.g., less than 550°C) to form a silicon nitride film. The thermally deposited silicon nitride film is then treated with hydrogen radicals to form a treated silicon nitride film.
|
| 申请公布号 |
KR20050085838(A) |
申请公布日期 |
2005.08.29 |
| 申请号 |
KR20057011586 |
申请日期 |
2003.12.18 |
| 申请人 |
APPLIED MATERIALS INC. |
发明人 |
WANG SHULIN;SANCHEZ ERROL ANTONIO C.;CHEN AIHUA |
| 分类号 |
C23C16/34;C23C16/56;H01L21/30;H01L21/314;H01L21/318;H01L21/336;(IPC1-7):H01L21/318 |
主分类号 |
C23C16/34 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
