| 摘要 |
The invention relates to a method for producing a buried tunnel junction (1) in a surface-emitting semiconductor laser and to a laser of this type. Said laser comprises an active zone (5) containing a pn-junction, surrounded by a first n-doped semiconductor layer (6) and at least one p-doped semiconductor layer (3, 4), in addition to a tunnel junction (1) on the p-side of the active zone (5), said tunnel junction bordering on a second n-doped semiconductor layer (2). To bury the tunnel junction (1), the layer provided for the tunnel junction (1) is removed laterally in a first step using material- selective etching until the desired diameter is achieved and is heated in a second step in a suitable atmosphere until the etched region (1a) is sealed by a mass transport from at least one of the semiconductor layers (2, 3) bordering on the tunnel junction (1). This enables surface- emitting laser diodes to be produced in high yields by simple technology, allowing the stabilisation of the lateral single-mode operation and the high-performance of the latter.
|
