POLISHING PAD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A polishing pad enabling a highly precise optical endpoint sensing during the polishing process and thus having excellent polishing characteristics (such as surface uniformity and in- plain uniformity) is disclosed. A polishing pad enabling to obtain the polishing profile of a large area of a wafer is also disclosed. A polishing pad of a first invention comprises a light-transmitting region having a transmittance of not less than 50 % over the wavelength range of 400-700 nm. A polishing pad of a second invention comprises a light- transmitting region having a thickness of 0.5-4 mm and a transmittance of not less than 80 % over the wavelength range of 600-700 nm. A polishing pad of a third invention comprises a light-transmitting region arranged between the central portion and the peripheral portion of the polishing pad and having a length (D) in the diametrical direction which is three times or more longer than the length (L) in the circumferential direction.