发明名称 |
A METHOD FOR FABRICATING A FLUX CONCENTRATING SYSTEM FOR USE IN A MAGNETOELECTRONICS DEVICE |
摘要 |
A method for fabricating a flux concentrating system (62) for use in a magnetoelectronics device is provided. The method comprises the steps of providing a bit line (10) formed in a substrate (12) and forming a first material layer (24) overlying the bit line (10) and the substrate (12). Etching is performed to form a trench (52) in the first material layer (24) and a cladding layer (56) is deposited in the trench (52). A buffer material layer (58) is formed overlying the cladding layer (56) and a portion of the buffer material layer (58) and a portion of the cladding layer (56) is removed.
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申请公布号 |
KR20050085682(A) |
申请公布日期 |
2005.08.29 |
申请号 |
KR20057011006 |
申请日期 |
2005.06.15 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
MEIXNER THOMAS V.;GRYNKEWICH GREGORY W.;MOLLA JAYNAL A.;REN J. JACK;WILLIAMS RICHARD G.;BUTCHER BRIAN R.;DURLAM MARK A. |
分类号 |
G11C11/16;H01L21/8246;(IPC1-7):H01L27/115 |
主分类号 |
G11C11/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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