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发明名称
STRUCTURE AND METHOD TO FORM SOURCE AND DRAIN REGIONS OVER DOPED DEPLETION REGIONS
摘要
申请公布号
SG113515(A1)
申请公布日期
2005.08.29
申请号
SG20040004299
申请日期
2004.07.30
申请人
CHARTERED SEMICONDUCTOR MANUFACTURING LTD
发明人
CHUI KING JIEN;BENISTANT FRANCIS;SAMUDRA GANESH SHAMKAR;TEE KIAN MENG;LI YISUO;LEONG KUM WOH, VINCENT;TEE KHENG CHOK
分类号
H01L21/336;H01L21/8238;H01L29/08;H01L29/76;H01L29/78
主分类号
H01L21/336
代理机构
代理人
主权项
地址
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