SEMICONDUCTOR DEVICE AND POWER CONVERTER, DRIVING INVERTER, GENERAL-PURPOSE INVERTER AND HIGH-POWER HIGH-FREQUENCY COMMUNICATION DEVICE USING SAME

摘要

By reducing the surface roughness of a silicon carbide semiconductor substrate which has a p-type and an n-type impurity semiconductor regions formed by ion implantation and is used in a semiconductor device, electric characteristics of the semiconductor device are improved as a consequence. The semiconductor device is a Schottky barrier diode or a PN diode wherein at least one of a P-type semiconductor region (3) and an N-type semiconductor region is selectively formed by ion implantation in a silicon carbide semiconductor region (1, 2) having a (000-1) surface or a surface inclined at a certain angle to the (000-1) surface as the outermost layer surface, and a metal electrode is formed on the outermost layer surface. By applying a voltage to the metal electrode, the direction of a current flowing vertically to the outermost layer surface is controlled.