发明名称 GAS LAYER FORMATION MATERIALS
摘要 The present invention provides gas layer formation material selected from the group consisting of acenaphthylene homopolymers; acenaphthylene copolymers; poly(arylene ether); polyamide; B-staged multifunctional acrylate/methacrylate; crosslinked styrene divinyl benzene polymers; and copolymers of styrene and divinyl benzene with maleimide or bis-maleimides. The formed gas layers (72) are used in microchips and multichip modules.
申请公布号 KR20050084638(A) 申请公布日期 2005.08.26
申请号 KR20057007807 申请日期 2005.05.02
申请人 HONEYWELL INTERNATIONAL INC. 发明人 LI BO;ZHOU DE LING;NAMAN ANANTH;APEN PAUL
分类号 C08G61/02;C08L65/00;H01L21/312;H01L21/316;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01B3/36;H01B3/18 主分类号 C08G61/02
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