| 摘要 |
A thin-film transistor for an active matrix display is fabricated using printing means, such as a gravure offset printer. First and second pattern layers (251, 25 2; 30) are formed on a layer structure (4) wherein at least one of the layers is printed. The printed layers (251, 252; 30) mask regions (271, 272, 28) for defining source and drain terminals. The second pattern layer (28) can be removed so as to allow etching of the second region (28) for defining a channel.
|
