| 摘要 |
A solid-state imaging device in which mixing of signals into adjacent pixels is prevented even if an overflow barrier for improving the sensitivity per unit area is formed in a deep position and an imaging area composed of light-receiving pixel sections (1) and transfer registers (2) each for transferring the signal charge stored in the light-receiving pixel sections (1) in one direction is provided on the front side of a semiconductor substrate. Barrier regions (15) which are impurity regions are formed over the whole imaging area, each region (15) being continuous in the direction perpendicular to the transfer direction and being positioned between two light-receiving pixel sections (1) adjacent to each other in the transfer direction of the transfer registers (2). Thus, a potential barrier adequate for prevention of mixing of signals is formed.
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