发明名称 Barrier film material and pattern formation method using the same
摘要 A resist film made of a chemically amplified resist is formed on a substrate. Subsequently, a barrier film for preventing a component of the resist film from eluting into an immersion liquid or preventing the immersion liquid from permeating into the resist film is formed on the resist film. Thereafter, with an immersion liquid provided on the barrier film, pattern exposure is carried out by selectively irradiating the resist film with exposing light through the barrier film. Then, after removing the barrier film, the resist film having been subjected to the pattern exposure is developed, so as to form a resist pattern made of the resist film.
申请公布号 US2005186516(A1) 申请公布日期 2005.08.25
申请号 US20050058369 申请日期 2005.02.16
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 ENDO MASAYUKI;SASAGO MASARU
分类号 G03F7/11;G03C5/00;G03F7/00;G03F7/09;G03F7/20;H01L21/00;H01L21/027;H01L21/84;(IPC1-7):H01L21/00 主分类号 G03F7/11
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