发明名称 |
Triple-gate MOSFET transistor and methods for fabricating the same |
摘要 |
Transistors and fabrication methods are presented in which a semiconductor body is deposited in a cavity of a temporary form structure above a semiconductor starting structure. The formed semiconductor body can be epitaxial silicon deposited in the form cavity over a silicon substrate, and includes three body portions, two of which are doped to form source/drains, and the other forming a transistor channel that overlies the starting structure. A gate structure is formed along one or more sides of the channel body portion to create a MOS transistor.
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申请公布号 |
US2005184319(A1) |
申请公布日期 |
2005.08.25 |
申请号 |
US20050112463 |
申请日期 |
2005.04.21 |
申请人 |
CHAMBERS JAMES J.;VISOKAY MARK R. |
发明人 |
CHAMBERS JAMES J.;VISOKAY MARK R. |
分类号 |
H01L21/00;H01L21/336;H01L29/76;H01L29/78;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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