发明名称 Wide band erbium-doped fiber amplifier with gain enhancement
摘要 A wide band erbium-doped fiber amplifier with a gain enhancement is provided comprising a first fiber amplifier adapted to amplify C-band components of an input optical signal, a second fiber amplifier connected to the first fiber amplifier in series while being disposed downstream from the first fiber amplifier to amplify L-band components of the input optical signal. A C/L splitter is disposed between the first and second fiber amplifiers and to split the amplified C and L-band optical signals to flow along different paths. A fiber reflector is disposed downstream from the second fiber amplifier to reflect the amplified L-band optical signal to flow backwards toward the second fiber amplifier. A circulator is disposed between the C/L splitter and the second fiber amplifier to guide the amplified L-band optical signal, reflected to flow backwards by the fiber reflector, so that the amplified L-band optical signal flows along a path different from that of optical signals applied to the circulator. A C/L combiner combines the amplified C-band optical signal split by the C/L splitter with the amplified L-band optical signal guided by the circulator, and applies the resultant optical signal to an output stage.
申请公布号 US2005185261(A1) 申请公布日期 2005.08.25
申请号 US20050067428 申请日期 2005.02.25
申请人 SAMSUNG ELECTRONICS CO., LTD 发明人 HWANG SEONG-TAEK;SONG KWAN-WOONG
分类号 H01S3/10;G02B6/00;H01S3/06;H01S3/067;H01S3/16;H01S3/23;(IPC1-7):H01S3/00 主分类号 H01S3/10
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