SINGLE-ELECTRON TRANSISTOR, FIELD-EFFECT TRANSISTOR, SENSOR, AND MANUFACTURING AND SENSING METHODS THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a single-electron transistor, a field-effect transistor, a sensor, and the manufacturing and sensing methods of the sensor which have a largely superior sensitivity, compared to the conventional transistors.

SOLUTION: The single-electron transistor has at least a substrate 1, has at least a source electrode 3 and a drain electrode 4 provided opposite to each other above the substrate 1, and a channel installed between the source and drain electrodes 3, 4. In this transistor, the channel is constituted out of an ultrafine fiber (CNT) 7.

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