| 摘要 |
PROBLEM TO BE SOLVED: To provide an antifuse element having satisfactory programming characteristic and high reliability by which a conductive filament can be formed with low voltage and low current, and to provide the manufacturing method of the anti-fuse and the writing method of the anti-fuse. SOLUTION: The antifuse element comprises a semiconductor layer on a semiconductor substrate, a contact hole formed at an insulation film covering the semiconductor layer, a barrier metal layer contacting with the semiconductor layer on the bottom surface of the contact hole, and a wiring metal layer laminated on the barrier metal layer. The metal of the wiring metal layer is made to enter the semiconductor layer for writing. At a part of the bottom surface of the contact hole, the wiring metal layer is removed. In addition, the barrier metal layer at the part is removed or made to be thinner than the other parts of the bottom surface. COPYRIGHT: (C)2005,JPO&NCIPI |
