SEMICONDUCTOR MEMORY AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory, having low-resistance gates suited for a memory cell array layout. SOLUTION: The nonvolatile semiconductor memory has a split gate structure of memory gates. The memory gate is, if formed with sidewall spacers, made of polysilicon and it is substituted by nickel silicide. This reduces the resistance, without giving influences on turning into silicide of selected gates or a diffusion layer. COPYRIGHT: (C)2005,JPO&NCIPI