FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a field effect transistor having a GAA (Gate All Around) structure, and to provide a method for manufacturing the field effect transistor. SOLUTION: The manufacturing method of the field effect transistor includes a step for forming first and second active regions that are usually separated each other at one portion in an upper layer on a semiconductor substrate, and project from the upper portion of the surface of a lower layer for supporting the upper layer on the semiconductor substrate; a step for forming a third active region that is vertically separated from the upper portion of the surface of the lower layer, connects between the first and second active regions, and has a bridge shape; and a step for forming a gate insulating film for covering the third active region before forming a gate electrode in the gate insulating film so that the third active region functions as a channel. COPYRIGHT: (C)2005,JPO&NCIPI