发明名称 |
Preparation of halftone phase shift mask blank |
摘要 |
In preparing a halftone phase shift mask blank, a metal and silicon-containing compound film serving as a halftone phase shift film is formed on a transparent substrate by a co-sputtering process including the steps of disposing a metal-containing target and a silicon target in a chamber, feeding sputtering gases into the chamber, and applying electric powers across both the targets at the same time. The sputtered region area of the metal-containing target is smaller than the sputtered region area of the silicon target. |
申请公布号 |
US2005186485(A1) |
申请公布日期 |
2005.08.25 |
申请号 |
US20050059529 |
申请日期 |
2005.02.17 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
YOSHIKAWA HIROKI;OKAZAKI SATOSHI |
分类号 |
C23C14/00;C23C14/06;C23C14/32;C23C14/34;G03C5/00;G03F1/00;G03F1/08;G03F1/32;G03F1/54;G03F1/68;G03F9/00;H01L21/027;(IPC1-7):G03F9/00 |
主分类号 |
C23C14/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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