| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface-emitting semiconductor laser, including a photodetection section that adopts a structure having flexibility of structure and can be driven at a high speed, and to provide a manufacturing method thereof. SOLUTION: The face emission semiconductor laser 100 includes a light-emitting section 140, and the photodetector 120, formed above the light-emitting section 140. The light-emitting section 140 includes a first mirror 102, an active layer 103 formed above the first mirror 102, and a second mirror 104 formed above the active layer 103. The second mirror 104 is a multilayer film mirror, and at least one layer among layers configuring unit periodicity of the second mirror 104 is a dielectric layer. COPYRIGHT: (C)2005,JPO&NCIPI
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