| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device, whereby the contact holes of a shape suitable for forming contact plugs, which will not cause bowing shape or a step difference shape, can be formed and the occurrence of improper contact resistance can be reduced. SOLUTION: When the contact holes 5 is formed on an inter-layer insulating film 2, first anisotropic dry etching is applied to the midway of the inter-layer insulating film 2, under the condition of the etching selection ratio between a photoresist 3 and the inter-layer insulating film 2 being low. Then anisotropic dry etching is applied up to the electric connection region or electric wires of active elements, under the condition of the etching selection ratio being high between the photoresist 3 and the inter-layer insulating film 2. COPYRIGHT: (C)2005,JPO&NCIPI
|
