| 摘要 |
PROBLEM TO BE SOLVED: To provide the inspecting method of an SIMOX wafer, with which penetration defects affecting a device process can speedily be estimated with very high probability, without actualizing the defect as an HF defect and non-destructively. SOLUTION: A silicon wafer 11, in which oxygen ions are poured for multiple times, is heat-treated. Thus, the presence or the absence of the penetration defect 13a is inspected through an SOI layer 13 of the SIMOX wafer 10 where an SOI layer 13 is formed on an embedded oxide film layer 12. More specifically, position data on particles existing on a surface of the silicon wafer 11 are measured, whenever oxygen ions are implanted, and a plurality of particle maps are formed. Then, a plurality of the particle maps are analyzed. Consequently, the number of penetration defects 13a of the SIMOX wafer 10 is estimated prior to carrying out the heat treatment. COPYRIGHT: (C)2005,JPO&NCIPI
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