发明名称 METHOD OF ALIGNING WAFER WITH PROBE CARD, PROBE INSPECTING METHOD, AND PROBE INSPECTION DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method of aligning a wafer with a probe card, to realize preferable heating temperatures for the temperature conditions at times about the wafer, a stage, the probe card, etc., a probe inspecting method and a probe inspection device. SOLUTION: A wafer W on a chuck stage 10 is heated, up to a specified temperature using a prober 100, comprising the chuck stage 10, the probe card 40, and a heater 20 for heating the wafer W for inspecting the wafer W at a high temperatures, after mounting. The method of aligning a wafer W with a probe card 40 comprises a step of measuring the temperatures of specified portions of the prober 100 in temperature varying regions subjected to influence of heating by the heater 20, while heating the wafer W mounted on the stage 10 by the heater 20; and aligning the wafer W with the probe card 40, after verifying that the temperatures of the measured portions have become stable. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005228788(A) 申请公布日期 2005.08.25
申请号 JP20040033340 申请日期 2004.02.10
申请人 SEIKO EPSON CORP 发明人 ITO HIDETOMO
分类号 G01R31/26;G01R1/073;H01L21/66;(IPC1-7):H01L21/66 主分类号 G01R31/26
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