发明名称 FIB exposure of alignment marks in MIM technology
摘要 A new and improved method for exposing alignment marks on a substrate by locally cutting through a metal or non-metal layer or layers sequentially deposited on the substrate above the alignment marks, using focused ion beam (FIB) technology. In a preferred embodiment, a method for exposing alignment marks on a substrate can be carried out by first providing a substrate that has multiple alignment marks provided thereon and at least one overlying opaque layer, typically but not necessarily metal, deposited on the substrate above the alignment marks. A focused ion beam is then directed against the overlying opaque layer or layers to cut through the layer or layers and expose the alignment marks on the substrate. A noble gas, preferably argon, is typically used as the ion source for the focused ion beam.
申请公布号 US2005186753(A1) 申请公布日期 2005.08.25
申请号 US20040786187 申请日期 2004.02.25
申请人 CHEN PING-HSU;CHUANG PING;ZHOU MEI-SHENG;KO FRANCIS;LEE HUXLEY;TSENG JOSHUA;LO HENRY 发明人 CHEN PING-HSU;CHUANG PING;ZHOU MEI-SHENG;KO FRANCIS;LEE HUXLEY;TSENG JOSHUA;LO HENRY
分类号 G03F9/00;H01J37/304;H01L21/302;H01L21/461;H01L21/76;H01L23/544;(IPC1-7):H01L21/76 主分类号 G03F9/00
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