| 摘要 |
PROBLEM TO BE SOLVED: To enable the formation of an SiON film with higher speed than before and with a state of good adhesiveness. SOLUTION: After a silicon oxide layer 102 is formed, supply of nitrogen gas is started in addition to the supply of oxygen gas to a region in which ECR plasma is generated. The state is made that radiation of nitrogen plasma 113 is performed to a silicon substrate 101 anew, and the state is made that a composition transition layer 103 is formed on the silicon oxide layer 102. In the formation of the composition transition layer 103, supply of nitrogen gas is gradually increased from a state of amount of supply "0". Simultaneously, supply of oxygen gas and silane gas 112 is also increased gradually. Finally, each gas is supplied with amount of supply in the state that composition of target SiON is realized. COPYRIGHT: (C)2005,JPO&NCIPI
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