发明名称 ION INJECTION DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an ion injection device by which a processing time is shortened with suppressed temperature rise at ion implantation with a substrate cooled efficiently, while preventing adherence of dust or the like to the substrate without contact and with a vacuum condition maintained, in an end station of the ion implanter. SOLUTION: In the end station of the ion injection device, a cooling member which is kept lower in temperature than the substrate and which receives heat radiation from the substrate is disposed near the substrate. In addition, in the cooling member, at least a portion confronting the substrate is formed to be flat surface, and the cooling member is arranged so that it faces at least either the front face or the rear face of the substrate, and that the flat surface is parallel to the substrate in a noncontact state. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005228674(A) 申请公布日期 2005.08.25
申请号 JP20040038018 申请日期 2004.02.16
申请人 MITSUI ENG & SHIPBUILD CO LTD 发明人 TSUJI YASUYUKI
分类号 H01J37/20;H01J37/317;(IPC1-7):H01J37/20 主分类号 H01J37/20
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