发明名称 Method for fabricating interconnect and interconnect fabricated thereby
摘要 A Method for discharge prevention during interconnection. A first metal layer is formed on a substrate and a dielectric layer is then formed on the substrate, covering the first metal layer. Two via holes are formed in the dielectric layer, exposing one end of the first metal layer, wherein the first via hole is nearer the end of the first metal layer than the second via hole. The second via hole is then filled to form a conductive via plug to electrically connect the first meal layer. A second metal layer is formed on the dielectric layer to electrically connect the conductive via plug.
申请公布号 US2005184392(A1) 申请公布日期 2005.08.25
申请号 US20040785176 申请日期 2004.02.23
申请人 发明人 CHEN KUN-HONG
分类号 G02F1/133;G02F1/136;H01L21/00;H01L21/768;H01L23/48;H01L29/786;(IPC1-7):H01L23/48 主分类号 G02F1/133
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