| 摘要 |
A method of manufacturing a semiconductor device including a plurality of MIS transistors formed on a semiconductor substrate, includes forming a plurality of gate electrodes associated with the MIS transistors on the semiconductor substrate, with a plurality of gate insulating films interposed between the gate electrodes and the semiconductor substrate, respectively, and successively forming a plurality of impurity diffusion regions for LDD regions in the semiconductor substrate, at decreasing junction depths, respectively, by using lithography and ion implantation, such that each of the impurity diffusion regions being provided on both sides of a respective one of the gate electrodes.
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