发明名称 |
Electrostatic discharge circuit and method therefor |
摘要 |
An ESD protection circuit ( 81 ) and a method for providing ESD protection is provided. In some embodiments, an N-channel transistor ( 24 ), which can be ESD damaged, is selectively turned on and made conducting. The purpose of turning on the N-channel transistor ( 24 ) is to maximize the Vt1 of the N-channel transistor ( 24 ). Vt1 is the drain-to-source voltage point at which the parasitic bipolar action of the N-channel transistor ( 24 ) first occurs. In some embodiments, the ESD protection circuit ( 81 ) includes a diode ( 64 ) which provides an additional current path from the I/O pad 31 to a first power supply node ( 76 ).
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申请公布号 |
US2005185351(A1) |
申请公布日期 |
2005.08.25 |
申请号 |
US20050111528 |
申请日期 |
2005.04.21 |
申请人 |
MILLER JAMES W.;KHAZHINSKY MICHAEL G.;STOCKINGER MICHAEL |
发明人 |
MILLER JAMES W.;KHAZHINSKY MICHAEL G.;STOCKINGER MICHAEL |
分类号 |
H01L27/02;H02H9/00;H02H9/04;(IPC1-7):H02H9/00 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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