| 摘要 |
<P>PROBLEM TO BE SOLVED: To manufacture a piezoelectric thin film having satisfactory piezoelectric characteristics and voltage resistant characteristics at low costs by increasing the amount of a (001) plane component in a crystal orientation, in the piezoelectric thin film having a perovskite type structure. <P>SOLUTION: The piezoelectric thin film having the perovskite type structure or a Bi laminar structure is grown at prescribed growth temperature before the piezoelectric thin film is cooled to prescribed medium temperature. In a cooling process from the prescribed growth temperature to the prescribed medium one, cooling is forcedly made from a substrate side. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
