| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a film deposition method and a film deposition system where, at the time of depositing a metal compound film, to a metal ultrathin film deposited on a substrate, its conversion into a compound film can be surely performed. <P>SOLUTION: At the time when, using a film deposition system provided with sputter film deposition regions 12 and 13 respectively having an Si target 6 and a Ti target 7, and a reaction region 14 having a gaseous oxygen introduction port 19 and an antenna mechanism 18 for microwave oscillation in a chamber 1, and in which a substrate 2 is held onto a rotary drum 4 whose circumferential face can be confronted with each inside of the sputter film deposition region 12, 13 and the inside of the reaction region 14, and a feeding power source 20 of high frequency bias power is connected to the substrate 2, an ultrathin film deposition stage where cathode voltage is applied to the Si target 6 or the Ti target 7 to deposit an Si or Ti ultrathin film on the substrate 2, and an oxide film conversion stage where microwaves are applied to gaseous oxygen from the gaseous oxygen introduction port 19 to generate a plasma gas are alternately repeated to deposit an SiO<SB>2</SB>film or a TiO<SB>2</SB>film, at least, in the oxide film conversion stage, high frequency bias voltage is applied to the substrate 2. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
