发明名称 |
Nonvolatile semiconductor memory device, method for driving the same, and method for fabricating the same |
摘要 |
A p-type source region 2 and a p-type drain region 3 are formed on the surface of an n-type semiconductor layer 1 . In the position located above a channel region interposed between the p-type source region 2 and the p-type drain region 3 and overlapping the p-type drain region 3 , a charge accumulation electrode 5 is formed with a tunnel oxide film 4 interposed therebetween. In the position located above the channel region interposed between the p-type source region 2 and the p-type drain region 3 and overlapping the p-type source region 2 , a select electrode 7 is formed with an insulating film 6 interposed therebetween. Above the charge accumulation electrode 5 , a control electrode 9 is formed with the insulating film 8 interposed therebetween.
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申请公布号 |
US2005184332(A1) |
申请公布日期 |
2005.08.25 |
申请号 |
US20050052811 |
申请日期 |
2005.02.09 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
HIROOKA KEIICHI;ARAI KATSUJIROU |
分类号 |
G11C16/04;H01L21/8247;H01L27/115;H01L29/06;H01L29/423;H01L29/788;H01L29/792;(IPC1-7):H01L29/06 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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