| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a power supply apparatus using the semiconductor device, wherein the device so reduces its characteristic variations caused by its temperature gradient as to be able to prevent nonconformities. <P>SOLUTION: The semiconductor device 1 has a semiconductor chip 10, wherein a power transistor 11 and a control circuit 12 for controlling the power transistor 11 are turned into an single-chip state. The power transistor 11 is disposed in the central portion of the semiconductor chip 10, and the control circuit 12 is disposed at the periphery of the power transistor 11. Consequently, the distance between the peripheral edge 11a of the power transistor 11 and the peripheral edge 12a of the control circuit 12, and the distance between the peripheral edge 11b of the power transistor 11 and the peripheral edge 12b of the control circuit 12 become short respectively, and the temperature difference of the inside of the control circuit 12, which is caused by the temperature gradient generated in the control circuit 12 by the heat generation of the power transistor 11, is reduced. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
