| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and a method for inspecting a polysilicon, which can identify a non-defective or defective one by measuring the distance between projection portions based on light intensity and wavelength of reflection light produced by irradiating the polysilicon with prescribed light to diffract it. SOLUTION: The apparatus and the method inspect the polysilicon, where a plurality of projection portions are formed because the polysilicon is irradiated with the prescribed light after a crystallization process and crystallized by the intensity and reflection angles of the reflected light. The apparatus includes a light source which emits the prescribed light; and a reflection light-detecting means which receives reflected light. The distance between the projection portions is determined from the incident angle of the light emitted from the light source to the projection portions, the detection angle of the reflection light detecting means and the wavelength of the detected refection light. That is, the distance between the projection portions is calculated, by using the mathematical expression: mλ=d(sinα+sinβ), where m is an integer,λis the wavelength of the reflected light, d is the distance between projection portions,αis the incident angle, andβis the detection angle. COPYRIGHT: (C)2005,JPO&NCIPI |
