| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method capable of avoiding damage to diffusion layers due to etching, even in reducing an element isolation film forming region and enlarging the diffusion layer formation region, for example, in a semiconductor substrate. SOLUTION: In a semiconductor device manufacturing method, there is formed an insulating film 8 covering at least an element isolation film 4, wiring 1, a diffusion layer 16, and a gate electrode on one main surface of a semiconductor substrate 100. Of the insulating film 8, the insulating film that is formed directly above the wiring 1 is expressed as a first insulating film 8a; and the insulating film adjoining the first insulating film having an R-plane 8c, located on the diffusion layer side from the wiring of the plane on the wiring side of the element isolation film, and formed on the plane on the wiring side from the round plane, is expressed as the second insulating film 8b. A resist pattern is formed on the insulating film, in such a manner as to cover the region, avoiding at least a part on the first insulating film 8a and including at least a part of the second insulating film 8b of the insulating film and the insulating film 8, that is formed directly above the diffusion layer 16. COPYRIGHT: (C)2005,JPO&NCIPI
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