| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser that can be mounted in junction-down manner and that is capable of surely preventing leakage current, flowing from a current injection region to a current non-injection region for enhancing heat dissipation properties in the current non-injection region, and that will not reduce heat dissipation properties near the end surface, and to provide a method of manufacturing the same. SOLUTION: The semiconductor laser 100 comprises: a laser structure section 5 in which a laser diode 3 provided with an activated layer 7, an n-type clad layer 6, and a p-type clad layer 8; a contact layer 9 provided in the p-type clad layer 8 and is divided by a isolation groove 20 into a current injection 9a and a current non-injection section 9b on the side of an exit end surface 30; a nonconductive film 10, formed in a region including the current non-injection section 9b in the contact layer 9 and the isolation groove 20; and an electrode film 10, formed in a region including the current non-injection region 9b in the contact layer 9 and the current injection section 9a. The current injection section 9a and current non-injection section 9b are connected to a heat sink 1 via a solder layer 2, disposed so as to embed the isolation groove 20. COPYRIGHT: (C)2005,JPO&NCIPI
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