| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, wherein a crystal semiconductor film formed on a semiconductor substrate is superior in crystallinity and the surface of the crystal semiconductor film has superior planarity. SOLUTION: The method for manufacturing a semiconductor device, wherein a crystal semiconductor film is formed on a semiconductor substrate, includes a non-crystal semiconductor film formation step (S101) of forming a non-crystalline semiconductor film on the semiconductor substrate, a first laser light irradiation step (S102) of melting the non-crystal semiconductor film by its thickness, by having a first laser light irradiated to the non-crystalline semiconductor film, a crystallization step (S103) of crystalizing the non-crystalline semiconductor film and transform it to a crystal semiconductor film, a cap film forming step (S104) of forming a cap film on the crystal semiconductor film, and a second laser light irradiation step (S105) of having a second laser light that does not have the amount of energy sufficient to melt the crystal semiconductor film by its thickness, irradiated to the crystal semiconductor film via the cap film. COPYRIGHT: (C)2005,JPO&NCIPI
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