发明名称 |
Nitride semiconductor device and method of manufacturing the same |
摘要 |
Provided is a nitride semiconductor device with high reliability and high flexibility in design and manufacture of the device. The nitride semiconductor device comprises a seed crystal portion ( 11 ) formed on a sapphire substrate ( 10 ) and having a mask ( 12 ) on one side surface thereof, and a GaN layer ( 15 ) grown on the sapphire substrate ( 10 ) and the seed crystal portion ( 11 ) through epitaxial lateral overgrowth. The GaN layer ( 15 ) is grown only from an exposed side surface of the seed crystal portion ( 11 ) which is not covered with the mask ( 12 ), so the lateral growth of the GaN layer ( 15 ) is asymmetrically carried out. Thereby, a meeting portion ( 32 ) is formed in the vicinity of a boundary between the seed crystal portion ( 11 ) and the mask ( 12 ) in a thickness direction of the GaN layer ( 15 ). Therefore, as the meeting portion ( 32 ) is formed in a position away from the center between the adjacent seed crystal portions ( 11 ) in a direction parallel to a surface of the substrate, a width W<SUB>L </SUB>of a lateral growth region is larger with respect to a pitch W<SUB>P </SUB>of the seed crystal potion ( 11 ), compared with conventional configurations.
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申请公布号 |
US2005184302(A1) |
申请公布日期 |
2005.08.25 |
申请号 |
US20050112295 |
申请日期 |
2005.04.22 |
申请人 |
KOBAYASHI TOSHIMASA;YANASHIMA KATSUNORI;YAMAGUCHI TAKASHI;NAKAJIMA HIROSHI |
发明人 |
KOBAYASHI TOSHIMASA;YANASHIMA KATSUNORI;YAMAGUCHI TAKASHI;NAKAJIMA HIROSHI |
分类号 |
H01L21/20;H01L21/336;H01L29/20;H01L33/00;H01M2/02;H01M4/02;H01M4/48;H01M4/52;H01M4/62;H01M6/10;H01M6/16;H01M10/40;H01M10/42;(IPC1-7):H01L29/221 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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