发明名称 |
Method of manufacturing thin film transistor, method of manufacturing electro-optical device thin film transistor, and electro-optical device |
摘要 |
A method of manufacturing a transistor includes the step of forming on a substrate a source electrode and drain electrode by selective electroless plating after patterning a charge control agent attached to the substrate using light, and the step of forming an organic semiconductor, a gate insulation layer, and a gate electrode.
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申请公布号 |
US2005186699(A1) |
申请公布日期 |
2005.08.25 |
申请号 |
US20050060726 |
申请日期 |
2005.02.18 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
KAWASE TAKEO;KIMURA SATOSHI;FURIHATA HIDEMICHI;HARADA MITSUAKI |
分类号 |
G02F1/1343;G02F1/1368;G02F1/167;H01L21/288;H01L21/3205;H01L21/336;H01L29/417;H01L29/423;H01L29/49;H01L29/786;H01L51/00;H01L51/05;H01L51/40;H01L51/50;H05B33/14;(IPC1-7):H01L21/44;H01L21/84 |
主分类号 |
G02F1/1343 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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