摘要 |
According to some embodiments of the invention, semiconductor devices and DRAM cells have plug contact holes. Methods of forming the same include forming a channel-portion hole disposed in a semiconductor substrate. Lower portions of the plug contact holes between first and second word line patterns extend downward from the main surface of the semiconductor substrate, thereby reducing a contact resistance between plug patterns and electrode impurity regions. The DRAM cell having the plug contact holes can improve the current driving capability of a transistor and the refresh characteristics of a capacitor.
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