发明名称 |
Resistive memory for low-voltage applications |
摘要 |
Memory cells having two electrodes and a layer arranged in between and including an active material which contains hexakisbenzylthiobenzene, dichlorodicyano-p-benzoquinone and optionally a polymer are provided. Furthermore, a process for the production of the cells according to the invention is provided, as well as the novel use of a composition which can be used as active material for the memory cells.
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申请公布号 |
US2005186737(A1) |
申请公布日期 |
2005.08.25 |
申请号 |
US20050041760 |
申请日期 |
2005.01.24 |
申请人 |
SEZI RECAI;WALTER ANDREAS;ENGL REIMUND;MALTENBERGER ANNA;SCHUMANN JOERG;WEITZ THOMAS |
发明人 |
SEZI RECAI;WALTER ANDREAS;ENGL REIMUND;MALTENBERGER ANNA;SCHUMANN JOERG;WEITZ THOMAS |
分类号 |
C09K11/06;G11C13/02;H01L21/8242;H01L27/28;H01L51/00;(IPC1-7):H01L21/824 |
主分类号 |
C09K11/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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