| 摘要 |
An improved reverse voltage generation circuit is offered. The reverse voltage generation circuit can be formed in a single semiconductor substrate, prevents leakage current of constituting MOS transistors and stabilizes operation of the circuit. A first and a second charge transfer MOS transistors and a first and a second driver MOS transistors are formed in a surface of a P-type semiconductor substrate. The first charge transfer MOS transistor and the first and the second driver MOS transistors are of a P-channel type, and formed in a first N-well, a second N-well and a third N-well, respectively. The first, the second and the third N-wells are formed in a surface of a P-type semiconductor substrate. The second charge transfer MOS transistor is of an N-channel type and formed in the surface of the P-type semiconductor substrate. A power supply voltage is applied to a source of the first driver MOS transistor and an inverted voltage is generated and outputted from a drain of the second charge transfer MOS transistor.
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