METHOD FOR CONTROLLING CONDUCTIVITY OF Ga2O3 SINGLE CRYSTAL

摘要

Disclosed is a method for controlling the conductivity of a Ga2O3 single crystal which enables to efficiently control the conductivity of a beta-Ga2O3 single crystal. A light-emitting device comprises an n-type beta-Ga2O3 substrate, and an n-type beta-AlGaO3 cladding layer, an active layer, a p-type beta-AlGaO3 cladding layer and a p-type beta-Ga2O3 contact layer sequentially arranged on the n-type beta-Ga2O3 substrate. By changing the Si concentration from 1 x 10<-5> mol% to 1 mol%, the resistivity is controlled within the range from 2.0 x 10<-3> ohmcm to 8 x 10<2> ohmcm and the carrier concentration is controlled within the range from 5.5 x 10<15>/cm<3> to 2.0 x 10<19>/cm<3>.