发明名称 SEMICONDUCTOR STRUCTURES HAVING MULTIPLE CONDUCTIVE LAYERS IN AN OPENING, AND METHODS FOR FABRICATING SAME
摘要 In some embodiments, a circuit structure comprises a semiconductor substrate, an opening passing through the substrate between a first side of the substrate and a second side of the substrate, and a plurality of conductive layers in the opening. In some embodiments, one conductive layer provides an electromagnetic shield that shields the substrate from AC signals carried by a contact pad made from another conductive layer on a backside of the substrate. The conductive layers can also be used to form capacitor/rectifier networks. Manufacturing methods also provided.
申请公布号 KR100509898(B1) 申请公布日期 2005.08.25
申请号 KR20037010999 申请日期 2003.08.21
申请人 发明人
分类号 H01L21/768;H01L29/872;H01L21/3205;H01L21/329;H01L21/822;H01L23/48;H01L23/52;H01L23/552;H01L27/04;H01L29/47;H01L29/861;(IPC1-7):H01L21/768 主分类号 H01L21/768
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