PLASMA RESISTANT MEMBER AND ITS PRODUCING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a plasma resistant member which is suitably used in a semiconductor production apparatus, exhibits excellent anchor effect to foreign matters sticking/depositing on a surface and can suppress the exfoliation of the foreign matters; and to provide a method for producing the same. SOLUTION: The plasma resistant member is obtained by spraying Y2O3or YAG on an alumina base material. The surface roughness (Ra) of the alumina base material is 5-15μm. The adhesion force can be improved by making the surface layer of the alumina base material into a porous layer having a porosity of 20-60% and depths of 10-100μm. Such plasma resistant member can be produced by subjecting the surface of the alumina base material to chemical etching and forming a plasma resistant layer by spraying Y2O3or YAG on the etched base material. COPYRIGHT: (C)2005,JPO&NCIPI