发明名称 |
Method for reducing defects after a metal etching in semiconductor devices |
摘要 |
The method prevents oxidation or contamination phenomena of conductive interconnection structures in semiconductor devices and includes providing a layer of semiconductor or oxide base, a conductive layer or stack on the base layer, and an antireflection coating (ARC) layer on the conductive layer or stack. The method provides a thin dielectric covering layer on the antireflection coating layer to fill or cover the microfissures existing in the antireflection coating layer.
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申请公布号 |
US2005186780(A1) |
申请公布日期 |
2005.08.25 |
申请号 |
US20040009687 |
申请日期 |
2004.12.10 |
申请人 |
STMICROELECTRONICS S.R.I. |
发明人 |
ALBA SIMONE;SPANDRE ALESSANDRO;ZANDERIGHI BARBARA |
分类号 |
H01L21/033;H01L21/28;H01L21/3205;H01L21/3213;H01L21/44;H01L21/768;(IPC1-7):H01L21/28;H01L21/320 |
主分类号 |
H01L21/033 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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