Method for measuring a structure formed on semiconductor wafer e.g. for manufacture of integrated circuits, involves use of raster electron microscope with electron beam source and detector

摘要

A method for measuring a semiconductor wafer structure involves initially preparing a semiconductor wafer with a structure comprising several equally spaced protuberances between which are formed gaps on the front face of the wafer, preparing a raster electron microscope with electron beam source and detector, preparing a substrate holder for accommodating the semiconductor wafer, irradiating the front face of the wafer in a measurement window, detecting the electrons scattered on the structure in the measuring window to obtain an intensity profile of the electrons, tilting the electron beam in second direction, irradiating the front face of the semiconductor wafer with the electron beam, detecting the scattered electrons in the detector to determine a second intensity profile of the scattered electrons and then determining the position of the gaps from the difference of the two intensity profiles. An independent claim is given for an arrangement for measuring a structure with a raster electron microscope and a semiconductor wafer.