发明名称 Batch-type deposition apparatus having gland portion
摘要 Batch-type deposition apparatus having a gland portion are provided. The apparatus include a reaction furnace, a gas nozzle located in the reaction furnace, a gas supply conduit located outside the reaction furnace and a gland portion for connecting the gas nozzle to the gas supply conduit. The gland portion includes a gas nozzle end extended from the gas nozzle toward an outside region of the reaction furnace and a gas supply conduit end extended from the gas supply conduit. The gas nozzle end is connected to the gas supply conduit end through a buffer member. The buffer member has an inclined inner wall for connecting an inner wall of the gas nozzle end to that of the gas supply conduit end.
申请公布号 US2005183664(A1) 申请公布日期 2005.08.25
申请号 US20040025005 申请日期 2004.12.28
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HWANG KYOUNG-HWAN;KIM JIN-SUNG;OK CHANG-HYUK;WOO JAI-YOUNG;CHOI MIN-HO
分类号 H01L21/205;C23C16/00;C23C16/40;C23C16/44;C23C16/455;C23C16/458;(IPC1-7):C23C16/00 主分类号 H01L21/205
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