发明名称 Solid-state image pickup device
摘要 A solid-state image pickup device has one or more pixels and a voltage generation part. The or each pixel has a photodetection diode, a signal storage region, an insulated-gate field effect transistor, and a substrate. The voltage generation part applies a specified gate voltage and drain voltage to a gate and a drain, respectively, of the insulated-gate field effect transistor to balance a photocurrent generated at the photodetection diode and a current discharged to the substrate with each other at least during a signal read of the pixel so that the pixel is kept in a steady-state operating status that the photocurrent is flowing to the substrate via the signal storage region steadily.
申请公布号 US2005185072(A1) 申请公布日期 2005.08.25
申请号 US20050067392 申请日期 2005.02.25
申请人 SHARP KABUSHIKI KAISHA 发明人 WATANABE TAKASHI
分类号 H01L27/146;H04N5/335;H04N5/355;H04N5/369;H04N5/374;(IPC1-7):H04N3/14 主分类号 H01L27/146
代理机构 代理人
主权项
地址