发明名称 |
Method for improving the electrical continuity for a silicon-germanium film across a silicon/oxide/polysilicon surface using a novel two-temperature process |
摘要 |
A method for making an improved silicon-germanium layer on a substrate for the base of a heterojunction bipolar transistor is achieved using a two-temperature process. The method involves growing a seed layer at a higher temperature to reduce the grain size with shorter reaction times, and then growing an epitaxial Si-Ge layer with a Si pap layer at a lower temperature to form the intrinsic base with low boron out-diffusion. This results in an HBT having the desired narrow base profile while minimizing the discontinuities (voids) in the Si-Ge layer over the insulator to provide good electrical contacts and uniformity to the intrinsic base.
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申请公布号 |
US2005186750(A1) |
申请公布日期 |
2005.08.25 |
申请号 |
US20040785524 |
申请日期 |
2004.02.24 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO. |
发明人 |
LEE KUEN-CHYR;YAO LIANG-GI;CHANG TIEN-CHIH;CHEN CHIA-LIN;CHEN SHIH-CHANG;LIANG MONG-SONG |
分类号 |
H01L21/20;H01L21/205;H01L21/331;H01L21/8222;(IPC1-7):H01L21/331;H01L21/822 |
主分类号 |
H01L21/20 |
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