| 摘要 |
A semiconductor device including a semiconductor element having external terminals at a first level and external electrodes at a second level, higher than the first level. The external terminals include power terminals, ground terminals and signal terminals formed on a main surface of the semiconductor element. The external electrodes include power electrodes connected to the power terminals via power connecting sections, ground electrodes connected to the ground terminals via ground connecting sections and signal electrodes connected to the signal terminals via signal connecting sections. One of the signal terminals, signal electrodes and corresponding signal connecting sections are surrounded by either the power connecting sections connecting the power terminals and power electrodes or by the ground connection sections connecting the ground terminals and ground electrodes. |
